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High performance type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

Identifieur interne : 009C67 ( Main/Repository ); précédent : 009C66; suivant : 009C68

High performance type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

Auteurs : RBID : Pascal:06-0279622

Descripteurs français

Pascal (Inist)
- Photoluminescence, Matrice plan focal, Détecteur IR, Détecteur rayonnement, Etude expérimentale, Microscopie force atomique, Microscopie électronique transmission, Imagerie thermique, Rayon X, Superréseau, Composé binaire, Indium arséniure, InAs, As In, 0757K, 0779L.

English descriptors

KwdEn :
- Atomic force microscopy, Binary compounds, Experimental study, Focal plane arrays, Indium arsenides, Infrared detectors, Photoluminescence, Radiation detectors, Superlattices, Thermal imaging, Transmission electron microscopy, X radiation.

Abstract

We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.

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<author><name sortKey="Razeghi, M" uniqKey="Razeghi M">M. Razeghi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering Northwestern University</s1>
<s2>Evanston, IL 60208</s2>
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<country>États-Unis</country>
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<author><name sortKey="Wei, Y" uniqKey="Wei Y">Y. Wei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Quantum Devices, Department of Electrical and Computer Engineering Northwestern University</s1>
<s2>Evanston, IL 60208</s2>
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<front><div type="abstract" xml:lang="en">We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.</div>
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High performance type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

High performance type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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